Fremont, Calif.-based Soraa, a leader in the development of GaN on GaN LED technology, received an award from the U.S. Department of Energy (DOE) for its outstanding work in the development of high-efficiency m-plane LEDs grown on low-defect density bulk GaN substrates. The company demonstrated a very high peak internal quantum efficiency (IQE of 88%), low efficiency droop (10% from 10Acm-2 to 100A.cm-2) and perfect wavelength stability (up to 200A.com-2) at a wavelength of 450nm LEDs.
“Research and development of LEDs on bulk GaN substrates is one of the critical approaches to the technological development of Solid State Lighting—a sentiment recently echoed by the National Academy of Sciences. We are pleased to recognize Soraa’s pioneering work in this area,” says Jim Brodrick, Manager of the U.S. Department of Energy’s Solid State Lighting Program.
“We are honored to receive an award from the U.S. Department of Energy and it is a further testament to deep technological expertise that has made us the world’s leader in the development of GaN on GaN LEDs on all planes,” says Mike Krames, CTO of Soraa.